Thermally Activated Delayed Fluorescence Emitters Based on Rigid Lactam Acceptors: Simultaneously Achieving Desirable Emission Efficiency, Horizontal Orientation, and Reverse Intersystem Crossing

Author:

Wu Ze‐Ling12,Sun Yu‐Fu12,Lv Xin12,Zhang Dong‐Hai12,Zhou Liang3,Meng Lingyi12,Chen Xu‐Lin124ORCID,Lu Can‐Zhong124ORCID

Affiliation:

1. State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China

2. Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institutes Chinese Academy of Sciences Xiamen Fujian 361021 China

3. State Key Laboratory of Rare Earth Resource Utilization Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 China

4. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China

Abstract

AbstractThermally activated delayed fluorescence (TADF) materials that exhibit simultaneously high photoluminescence quantum yield (PLQY), rapid reverse intersystem crossing (RISC), and a high horizontal transition dipole ratio are highly desirable for realizing high‐performance organic light‐emitting diodes (OLEDs). However, achieving this goal remains a formidable challenge due to the stringent molecular design principles involved. Herein, three highly efficient TADF materials based on lactam‐type electron‐acceptors are reported. The inherent rigidity and planar structure of lactam units, along with the ordered molecular arrangement in solid states, contribute to the reduction of nonradiative decay and the high horizontal transition dipole ratio in the optimized TADF emitters. Moreover, through precise control of the alignment of the lowest excited states by adjusting the charge transfer strength, the rate constants for reverse intersystem crossing (kRISC) are dramatically boosted. Consequently, the two optimized emitters exhibit outstanding merits of ultra‐high PLQYs (98% and 99%), high horizontal transition dipole ratios (91% and 87%), and fast RISC (kRISC ≈ 1.7 ×  106 s−1). Thanks to these merits, the doped OLEDs achieve excellent performance. The top‐performing device achieve a maximum external quantum efficiency of 34.3%, a peak luminance of 57376 cd m2, and small efficiency roll‐off.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China

Publisher

Wiley

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