Magnetically Controllable Two‐Dimensional Spin Transport in a 3D Crystal

Author:

Dowinton Oliver1ORCID,Maryenko Denis2ORCID,Belosludov Rodion Vladimirovich3,Yang Bohm‐Jung456,Bahramy Mohammad Saeed1ORCID

Affiliation:

1. Department of Physics and Astronomy The University of Manchester Oxford Road Manchester M13 9PL United Kingdom

2. RIKEN Center for Emergent Matter Science (CEMS) Wako 351‐0198 Japan

3. Institute for Materials Research Tohoku University Sendai 980‐08577 Japan

4. Center for Correlated Electron Systems Institute for Basic Science (IBS) Seoul 08826 South Korea

5. Department of Physics and Astronomy Seoul National University Seoul 08826 South Korea

6. Center for Theoretical Physics Seoul National University Seoul 08826 South Korea

Abstract

Abstract2D phases of matter have become a new paradigm in condensed matter physics, bringing in an abundance of novel quantum phenomena with promising device applications. However, realizing such quantum phases has its own challenges, stimulating research into non‐traditional methods to create them. One such attempt is presented here, where the intrinsic crystal anisotropy in a “fractional” perovskite, EuxTaO3 (x = 1/3 − 1/2), leads to the formation of stacked layers of quasi‐2D electron gases, despite being a 3D bulk system. These carriers possess topologically non‐trivial spin textures, indirectly controlled by an external magnetic field via proximity effect, making it an ideal system for spintronics, for which several possible applications are proposed. An anomalous Hall effect with a non‐monotonic dependence on carrier density is shown to exist, signifying a shift in band topology with carrier doping. Furthermore, quantum oscillations in charge conductivity and oscillating thermoelectric properties are examined and proposed as routes to experimentally demonstrate the quasi‐2D behavior.

Funder

Samsung Science and Technology Foundation

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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