Affiliation:
1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 P. R. China
2. College of Computer Science and Electronic Engineering Hunan University Changsha 410082 P. R. China
3. State Key Laboratory for Chemo/Biosensing and Chemometrics College of Semiconductors (Integrated Circuits) Hunan University Changsha 410082 P. R. China
4. Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China
Abstract
AbstractMetal oxide semiconductors (MOSs) are considered as potential candidates for the low‐cost, large‐area fabrication of flexible optoelectronic devices. However, the current optoelectronic devices based on MOSs are limited to unidirectional photoresponse, which constrains the performance of MOSs‐based vision sensors for artificial vision systems. Herein, for the first time, a flexible artificial vision system integrated with optical perception, computation, and learning functionalities is demonstrated using SnO optoelectronic synaptic transistor‐based event‐driven vision sensors to enable dynamic image perception, noise reduction, detection, and recognition. Specifically, an ambipolar SnO transistor is demonstrated by introducing HfO2 passivation layer, which facilitates the movement of O atoms around Sn‐vacancy sites to the HfO2 layer to achieve the transformation from p‐type to ambipolar transport behaviors. More importantly, the HfO2‐passivated SnO transistors exhibit gate‐tunable bidirectional photoresponse behavior, which is essential to simulate the neurobiological functionalities of bipolar cells. This way, the multilayer neural network learning circuit built from SnO transistors achieves fast recognition at a 16% Gaussian noise level and high recognition accuracy up to 95.2% for pattern letters. Under the bending states, recognition accuracies are still retained at 91.2%. These properties are well retained even under the influence of 100% offset of the synaptic programming value.
Funder
China National Funds for Distinguished Young Scientists
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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