Interfacial Ion‐Trapping Electrolyte‐Gated Transistors for High‐Fidelity Neuromorphic Computing-Reference-Cited by-同舟云学术

Interfacial Ion‐Trapping Electrolyte‐Gated Transistors for High‐Fidelity Neuromorphic Computing

Published:2022-03-14 Issue:24 Volume:32 Page:2201048
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Jin Minho¹,Lee Haeyeon¹,Im Changik¹,Na Hyun‐Jae¹²,Lee Jae Hak¹²,Lee Won Hyung¹,Han Junghyup³,Lee Eungkyu⁴,Park Junwoo⁵,Kim Youn Sang¹³⁶^ORCID

Affiliation:

1. Program in Nano Science and Technology Graduate School of Convergence Science and Technology Seoul National University Seoul 08826 Republic of Korea

2. Samsung Display Company, Ltd. Yongin‐si Gyeonggi‐Do 17113 Republic of Korea

3. School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea

4. Department of Electronic Engineering Kyung Hee University Yongin‐si Gyeonggi‐do 17104 Republic of Korea

5. Department of Chemistry Sogang University Seoul 04107 Republic of Korea

6. Advanced Institutes of Convergence Technology Suwon‐si Gyeonggi‐do 16229 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202201048

Reference66 articles.

1. Physics for neuromorphic computing

2. Neuromorphic nanoelectronic materials

3. Evolution of Bio‐Inspired Artificial Synapses: Materials, Structures, and Mechanisms

4. Pathways to efficient neuromorphic computing with non-volatile memory technologies

5. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

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