AgCuS: A Single Material Diode with Fast Switching Times

Abstract

AbstractPnp‐switchable semiconductor materials are capable of switching their electronic properties from p‐ to n‐type conduction. Observed in the handful of discovered compounds, this behavior is usually accompanied by a temperature‐dependent phase transition. During this transition, the dynamical rearrangement of a certain substructure enables the change of the predominant charge carrier type. Considering the immense demand for compact and flexible electronic components, one possible approach is the construction of unconventional one‐compound diodes using these pnp‐switchable materials. In this study, pnp‐switchable AgCuS is applied to realize a functional one‐compound diode. AgCuS is accessible in large quantities as bulk material in a simple and short timeframe. Featuring an addressable pnp‐switch at 364 K, this material is suitable for diode generation and usage in varied applications. The diode properties of AgCuS devices are reported and illustrate its reversibility and flexibility for diode operation. The material is fully characterized with regards to its electrical and thermal properties, as well as its diode performance. Properties of AgCuS are discussed in relation to the pnp‐switchable material Ag18Cu3Te11Cl3, which is successfully used to fabricate the first one‐compound diode operating close to room temperature.