Selenium Substitution in Bithiophene Imide Polymer Semiconductors Enables High‐Performance n‐Type Organic Thermoelectric

Author:

Li Jianfeng1,Liu Min2,Yang Kun3,Wang Yimei1,Wang Junwei1,Chen Zhicai1,Feng Kui1,Wang Dong4,Zhang Jianqi5,Li Yongchun1,Guo Han1,Wei Zhixiang5,Guo Xugang1ORCID

Affiliation:

1. Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) No. 1088, Xueyuan Road Shenzhen Guangdong 518055 China

2. School of Chemistry and Materials Engineering Huizhou University Huizhou Guangdong 516001 China

3. State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha Hunan 410082 China

4. Shenzhen Key Laboratory of Advanced Materials School of Materials Science and Engineering Harbin Institute of Technology Shenzhen 518055 China

5. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100190 China

Abstract

AbstractDesigning n‐type polymers with high electrical conductivity remains a major challenge for organic thermoelectrics (OTEs). Herein, by devising a novel selenophene‐based electron‐deficient building block, the pronounced advantages of selenium substitution in simultaneously enabling advanced n‐type polymers is demonstrated with high mobility (≈2 orders of magnitude higher versus their sulfur‐based analogues due to both intensified intra‐ and inter‐chain interactions) and much improved n‐doping efficiency (enabled by the largely lowered LUMO level with a ≈0.2 eV margin) of the resulting polymers. Via side chain optimization and donor engineering, the selenium‐substituted polymer, f‐BSeI2TEG‐FT, achieves a highest conductivity of 103.5 S cm−1 and power factor of 70.1 µW m−1 K−2, which are among the highest values reported in literature for n‐type polymers, and f‐BSeI2TEG‐FT greatly outperformed the sulfur‐based analogue polymer by 40% conductivity increase. These results demonstrate that selenium substitution is a very effective strategy for improving n‐type performance and provide important structure‐property correlations for developing high‐performing n‐type OTE materials.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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