γ‐Valerolactone Enabling Spontaneously Inhibited Iodide Oxidation for High‐Quality Perovskite Single Crystal Fabrication

Author:

Li Zining1,Sun Shipei1,Jiang Haotian12,Ding Zhiyuan3,Zhang Chao3,Cui Zhili3,Wang Yuling4,Chen Yu1ORCID,Zhong Haizheng1

Affiliation:

1. MIIT Key Laboratory for Low‐Dimensional Quantum Structure and Devices School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China

2. North Laser Research Institute Co. Ltd. Chengdu 610041 China

3. Nanovision Technology (Beijing) Co. Ltd. Beijing 100094 China

4. College of Physics and Electrical Information Engineering Daqing Normal University Daqing 163000 China

Abstract

AbstractThe iodide precursor oxidation has persistently plagued solution grown iodine‐based perovskite single crystals (IPSCs) that inevitably introduce undesirable triiodide ion (I3) defects and severely hindering crystal quality, despite IPSCs having garnered remarkable progress in multifarious photoelectronic applications. In this work, the spontaneously inhibited iodide oxidation is discovered in an eco‐friendly solvent, γ‐Valerolactone (GVL), and demonstrates a universal solution approach for fabricating high‐quality IPSCs. Compared to the routine γ‐Butyrolactone (GBL) system, GVL provides a lowered growth temperature and a significantly broadened inverse temperature operation window, thereby improving the theoretical utilization rate of perovskite precursors up to 88.6%. More importantly, due to its higher open‐ring hydrolysis energy, GVL can spontaneously inhibit the iodide precursors oxidation without any additional reductant and therefore effectively prevent the forming I3 defects. Typically, the as‐fabricated MAPbI3 single crystal possesses an extremely low trap density of 3.57 × 108 cm−3 and a high carrier mobility‐lifetime (µτ) product of 2.74 × 10−3 cm2 V−1, which enables its photodetection capabilities to be on a par with the state‐of‐art MAPbI3 single crystal photodetectors. This work paves an efficacious and green pathway for high‐quality IPSC fabrication toward advanced optoelectronic utilizations.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

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