In Situ Design of High‐Performance Dual‐Phase GeSe Thermoelectrics by Tailoring Chemical Bonds

Abstract

AbstractComposite engineering favors high thermoelectric performance by tuning the carrier and phonon transport. Herein, orthorhombic and rhombohedral dual‐phase GeSe are designed in situ by tailoring chemical bonds. Atom probe tomography verifies the coexistence of a covalently bonded orthorhombic phase and a metavalently bonded rhombohedral phase in GeSe‐InTe alloys. The production of the rhombohedral phase simultaneously increases the carrier concentration, the carrier mobility, the band degeneracy, and the density‐of‐states effective mass due to the reduced formation energy of cation vacancies and the improved crystal symmetry. These attributes are beneficial to a high‐power factor. In addition, the thermal conductivity can be significantly reduced due to the intrinsically strong lattice anharmonicity of the metavalently bonded phase, the interfacial acoustic phonon mismatch across different bonding mechanisms, and the phonon scattering at vacancy‐solute clusters. Moreover, the metavalently bonded phase embraces higher solubility of dopants that enables the further optimization of properties by Cd‐Ag doping, resulting in a zT of 0.95 at 773 K as well as enhanced strength and ductility in dual‐phase Ge0.94Cd0.03Ag0.03Se(InTe)0.15. This work indicates that in situ design of dual‐phase composites by tailoring chemical bonds is an effective method for enhancing the thermoelectric and mechanical properties of GeSe and other p‐bonded chalcogenides.