Effect of doping location on photoconductive spectrum of SiGe quantum dots-Reference-Cited by-同舟云学术

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Effect of doping location on photoconductive spectrum of SiGe quantum dots

Published:2007-02 Issue:2 Volume:204 Page:477-482
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Schacham S. E.,Vardi A.,Le Thanh V.,Finkman E.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection

2. Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si

3. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

4. Midinfrared photoconductivity of Ge/Si self-assembled quantum dots

5. Midinfrared Photoconductivity in Ge/Si Self-Assembled Quantum Dots

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