Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films-Reference-Cited by-同舟云学术

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Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films

Published:2004-12 Issue:15 Volume:201 Page:R123-R126
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Kim Ik Soo,Kim Yong Tae,Kim Seong Il,Yoo Dong Chul,Lee Jeong Yong

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. and The Physics of Ferroelectric Memories, Physics Today, July 1998, 22 (1998).

2. Effects of H2Sintering and Pt Upper Electrode on Metallic Bi Content in Sr0.9Bi2.1Ta2O9Thin Films for Ferroelectric Memories Prepared by Sol-Gel Method

3. Effects of Hydrogen Annealing on the Electrical Properties of SrBi2Nb2O9 Thin Films

4. Processing and effects of annealing in sol-gel derived SrBi2 Ta 2O9 thin films

5. Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors

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