Fabrication and characterization of self-assembled InGaN quantum dots by periodic interruption growth-Reference-Cited by-同舟云学术

Fabrication and characterization of self-assembled InGaN quantum dots by periodic interruption growth

Published:2008-02 Issue:2 Volume:205 Page:300-304
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Choi Seung-Kyu,Jang Jae-Min,Jhin Jung-Keun,Jung Woo-Gwang

Funder

ERC (Center for Materials and Processes of Self-Assembly) program of MOST/KOSEF

Research Program 2006 of Kookmin University in Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200723369/fullpdf

Reference23 articles.

1. Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks

2. Synthesis and optical properties of single crystal ZnO nanorods

3. Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane

4. Progress in Growth and Physics of Nitride-Based Quantum Dots

5. Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

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