Evidence of type-II band alignment at the ordered GaInNP to GaAs heterointerface-Reference-Cited by-同舟云学术

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Evidence of type-II band alignment at the ordered GaInNP to GaAs heterointerface

Published:2009-05 Issue:5 Volume:206 Page:803-807
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi (a)

Author:

Hsu H. P.,Huang Y. N.,Huang Y. S.,Sitarek P.,Tiong K. K.,Tu C. W.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure

2. Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

3. 29.5%‐efficient GaInP/GaAs tandem solar cells

4. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors

5. Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices

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