Electrical characterization of Si-ion implanted AlxGa1-xN annealed at lower temperatures-Reference-Cited by-同舟云学术

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Electrical characterization of Si-ion implanted AlxGa1-xN annealed at lower temperatures

Published:2006-05 Issue:7 Volume:203 Page:1650-1653
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Ryu Mee-Yi,Yeo Y. K.,Zens T. W.,Marciniak M. A.,Hengehold R. L.,Steiner T.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Electrical and structural analysis of high-dose Si implantation in GaN

2. Activation of silicon ion-implanted gallium nitride by furnace annealing

3. Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

4. Electrical activation studies of GaN implanted with Si from low to high dose

5. Optical study of implantation damage recovery from Si-implanted GaN

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