Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers-Reference-Cited by-同舟云学术

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Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

Published:2003-01 Issue:1 Volume:195 Page:116-121
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Morales F. M.,Molina S. I.,Araújo D.,Cimalla V.,Pezoldt J.,Barbadillo L.,Hernández M. J.,Piqueras J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys;physica status solidi (b);2004-11

2. Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si;Boletín de la Sociedad Española de Cerámica y Vidrio;2004-04-30

3. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys;Applied Physics Letters;2003-12-15

4. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers;Diamond and Related Materials;2003-07

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