1. S. Lai and T. Lowrey, IEDM (International Electron Devices Meeting), Technical Digest, 2001, p. 36.5.
2. G. Atwood and R. Bez, Proceedings of the International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2007, 2007, p. 100.
3. D. Ha and K. Kim, Proceedings of the International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2007, 2007, p. 102.
4. C. Lam, Proceedings of the 65th Annual Device Research Conference, 2007, p. 223.
5. Phase-change materials for rewriteable data storage