Influence of insulating barrier thickness on the magnetoresistance properties of a magnetic tunnel junction with Zr-alloyed Al oxide barrier-Reference-Cited by-同舟云学术

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Influence of insulating barrier thickness on the magnetoresistance properties of a magnetic tunnel junction with Zr-alloyed Al oxide barrier

Published:2004-06 Issue:8 Volume:201 Page:1704-1707
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Choi Chul-Min,Lee Seong-Rae

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Spin-dependent tunnel junctions with ZrOx barriers

2. Tantalum oxide as an alternative low height tunnel barrier in magnetic junctions

3. Tunnel magnetoresistance in magnetic tunnel junctions with a ZnS barrier

4. Low-resistance spin-dependent tunnel junctions with HfAlO/sub x/ barriers for high-density recording-head application

5. Low-resistance spin-dependent tunnel junctions with ZrAlOx barriers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of thickness and band structure of insulating barriers on resistance and tunneling magnetoresistance properties of magnetic tunnel junctions with Al-oxide and Ti-alloyed Al-oxide barriers;Current Applied Physics;2007-01

2. Band structure modification of Al oxide by Ti-alloying and magnetoresistance behavior of magnetic tunnel junctions with Ti-alloyed Al oxide barrier;Applied Physics Letters;2005-06-20

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