Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm-Reference-Cited by-同舟云学术

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Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

Published:2006-05 Issue:7 Volume:203 Page:1783-1786
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Pattison P. Morgan,Sharma Rajat,David Aurelian,Waki Ichitaro,Weisbuch Claude,Nakamura Shuji

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Resonant cavity light‐emitting diode

2. Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends

3. Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm

4. A. Weinert, Plastic Optical Fibers (Publicis MCD Verlag, Erlangen and Munich, 1999).

5. High brightness visible (660 nm) resonant-cavity light-emitting diode

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photonic crystal light-emitting sources;Reports on Progress in Physics;2012-10-26

2. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness;Applied Physics Letters;2007-01-15

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