Tunneling phenomena in carbon nanotube field-effect transistors-Reference-Cited by-同舟云学术

Tunneling phenomena in carbon nanotube field-effect transistors

Published:2008-04 Issue:4 Volume:205 Page:679-694
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Knoch Joachim,Appenzeller Joerg

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical properties of carbon nanotubes (Imperial College Press, 1998).

2. Properties and application of high-mobility semiconducting nanotubes;Duerkop;J. Phys.: Condens. Matter,2004

3. Ballistic carbon nanotube field-effect transistors;Javey;Nature,2003

4. J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, and Ph. Avouris, Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors, Internat. Electron Dev. Meeting 2002, Technical Digest, 285-288 (2002).

5. Field-modulated carrier transport in carbon nanotube transistors;Appenzeller;Phys. Rev. Lett.,2002

Cited by 172 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A simulation study of electrostatically doped silicene and graphene nanoribbon FETs;Journal of Computational Electronics;2024-09-10

2. Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution;Micromachines;2024-06-25

3. Analytical modeling of drain current for DG-Graphene Nanoribbon Vertical Tunnel FET;Microelectronics Journal;2024-05

4. An Improved Dual-Gate Compact Model for Carbon Nanotube Field Effect Transistors with a Back-Gate Effect and Circuit Implementation;Electronics;2024-02-01

5. Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications;Physica Scripta;2023-08-01