An investigation into the ordering of metal atoms in CuGaS2 grown by MOVPE-Reference-Cited by-同舟云学术

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An investigation into the ordering of metal atoms in CuGaS2 grown by MOVPE

Published:2004-08 Issue:10 Volume:201 Page:2239-2244
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Branch M. S.,Berndt P. R.,Leitch A. W. L.,Weber J.,Botha J. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Excitonic Photoluminescence from CuGaSe2Single Crystals and Epitaxial Layers: Temperature Dependence of the Band Gap Energy

2. and in: Proceedings of the 11th International Conference on Ternary and Mutinary Compounds, Salford, United Kingdom (IOP Publishing Ltd, Bristol, UK, 1998), pp. 155-158.

3. Cd-free buffer layers for CIGS solar cells prepared by a dry process

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the role of copper content in the crystal structure and phase stability of epitaxial Cu(In,Ga)S2 films on GaP/Si(001);Materials Science in Semiconductor Processing;2023-11

2. The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE;Physica B: Condensed Matter;2006-04

3. Epitaxial Cu(In,Ga)S2 thin film solar cells;Journal of Physics and Chemistry of Solids;2005-11

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