Porous-like silicon prepared from Si:H annealed at high argon pressure-Reference-Cited by-同舟云学术

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Porous-like silicon prepared from Si:H annealed at high argon pressure

Published:2003-05 Issue:1 Volume:197 Page:236-240
ISSN:0031-8965
Container-title:physica status solidi (a)
language:
Short-container-title:phys. stat. sol. (a)

Author:

Misiuk A.,Zhuravlev K. S.,Bryja L.,Bak-Misiuk J.,Antonova I. V.,Vandyshev E. N.,Barcz A.,Kaniewska M.,Romano-Rodriguez A.,Kovacsics C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deuterium accumulation within nano-structured layers in Si:He upon plasma treatment;physica status solidi (c);2009-12

2. Buried spongy-like layers in silicon implanted with He+, annealed and treated in D+plasma;physica status solidi (c);2009-07

3. Optical methods for microstructure determination of doped samples;16th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics;2008-12-12

4. Pressure mediated release of hydrogen from silicon co-implanted with H2+ and He+;physica status solidi (c);2007-05

5. Influence of temperature–pressure treatment on heavily hydrogenated silicon surface;Applied Surface Science;2006-07

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