Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO-Reference-Cited by-同舟云学术

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Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO

Published:2005-08 Issue:10 Volume:202 Page:1967-1972
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Wang Jinzhong,Sallet Vincent,Amiri Gaëlle,Rommeluère Jean-François,Lusson Alain,Rzepka E.,Lewis John E.,Galtier Pierre,Gorochov Ouri

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Structural studies of room-temperature RF magnetron sputtered ZnO films under different RF powered conditions

2. Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

3. Growth of high-quality epitaxial ZnO films on α-Al2O3

4. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

5. Metalorganic chemical vapor phase deposition of ZnO with different O-precursors

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1. Substrate polarity and surface pretreatment temperature dependence of ZnO homoepitaxy;Applied Surface Science;2016-01

2. Thermal pretreatment of sapphire substrates prior to ZnO buffer layer growth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-09

3. Structural and impedance spectroscopy study of Al‐doped ZnO nanorods grown by sol‐gel method;Microelectronics International;2012-07-27

4. MgZnO synthesis employing weak oxidants for accurate Mg incorporation control;Journal of Crystal Growth;2011-10

5. Annealing and partial pressure ratio effects on ZnO films grown by metal-organic chemical vapor deposition using tert-butanol as oxidant;Thin Solid Films;2010-09

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