Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire-Reference-Cited by-同舟云学术

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Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Published:2007-09 Issue:9 Volume:204 Page:3121-3125
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Son Chang-Sik,Ogura Mustuo,Sung Yun Mo,Leem Si Jong,Kim Tae Geun

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

2. Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates

3. Direct electronic transport through an ensemble of InAs self-assembled quantum dots

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