Analysis of the hot carrier luminescence in AlxGa1?xAs/GaAs power HFET's
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Prebreakdown phenomena in GaAs epitaxial layers and FET's
2. and ?Negative differential resistance and instabilities in 2-D semiconductors?, p. 215, edited by N. Balkan, B. K. Ridley, and A. J. Vickers, Plenum Press 1993.
3. Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques
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5. On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices
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1. Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities;Journal of Applied Physics;2013-03-28
2. Light emission from semiconductor triode;Microelectronics Journal;2007-12
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