4H-SiC MISFETs with nitrogen-containing insulators-Reference-Cited by-同舟云学术

4H-SiC MISFETs with nitrogen-containing insulators

Published:2009-06-25 Issue:10 Volume:206 Page:2374-2390
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Noborio Masato,Suda Jun,Beljakowa Svetlana,Krieger Michael,Kimoto Tsunenobu

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200925247/fullpdf

Reference72 articles.

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4. Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

5. Infineon; http://www.infineon.com/

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