Bulk gallium nitride: preparation and study of properties-Reference-Cited by-同舟云学术

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Bulk gallium nitride: preparation and study of properties

Published:2003-01 Issue:1 Volume:195 Page:122-126
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Zhilyaev Yu. V.,Nasonov A. V.,Raevski S. D.,Rodin S. N.,Shcheglov M. P.,Davydov V. Yu.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of freestanding 2″-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown;physica status solidi (a);2010-05-17

2. Self-separated freestanding GaN using a NH4Cl interlayer;Applied Physics Letters;2007-11-05

3. Free standing GaN layers with GaN nanorod buffer layer;physica status solidi (c);2007-06

4. High quality GaN layers grown on slightly miscut sapphire wafers;MRS Proceedings;2005

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