Influences of partial melting and overheating on amorphization of Ge2Sb2Te5during the reset process
Author:
Publisher
Wiley
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
2. Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase
3. Characterization of Ge–Sb–Te thin films deposited using a composition-spread approach
4. Optical characterization of multilayer stacks used as phase-change media of optical disk data storage
5. Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films
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