Visible and infrared photoluminescence from erbium-doped silicon nanocrystals produced by rf sputtering-Reference-Cited by-同舟云学术

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Visible and infrared photoluminescence from erbium-doped silicon nanocrystals produced by rf sputtering

Published:2007-06 Issue:6 Volume:204 Page:1769-1774
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Cerqueira M. F.,Losurdo M.,Monteiro T.,Stepikova M.,Soares M. J.,Peres M.,Alpuim P.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+

2. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

3. Carrier-induced Er3+ luminescence quenching of erbium-doped silicon-rich silicon oxide

4. Exciton–erbium interactions in Si nanocrystal-doped SiO2

5. Erbium-doped silicon nanocrystals grown by r.f. sputtering method: Competition between oxygen and silicon to get erbium

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