Ferroelectric differential capacitance affected by stresses and strains and implications for use in electronic devices-Reference-Cited by-同舟云学术

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Ferroelectric differential capacitance affected by stresses and strains and implications for use in electronic devices

Published:2019-01-11 Issue:4 Volume:61 Page:948-953
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Krowne C. M.¹^ORCID

Affiliation:

1. Electromagnetics Technology Branch, Electronics Science & Technology DivisionNaval Research Laboratory Washington District of Columbia

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.31699

Reference7 articles.

1. Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices

2. Evaluation of the differential capacitance for ferroelectric materials using either charge-based or energy-based expressions

3. Microwave dielectric properties of strained Ba0.5Sr0.5TiO3 films with and without strain-induced permanent polarization at room temperature

4. Strain-relieved Ba0.6Sr0.4TiO3 thin films for tunable microwave applications

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