Auto‐clamping interface circuit for high electron mobility transistor‐based heavy metal detection sensor-Reference-Cited by-同舟云学术

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Auto‐clamping interface circuit for high electron mobility transistor‐based heavy metal detection sensor

Published:2021-01-13 Issue:3 Volume:49 Page:864-877
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Kishore Kaushal¹²^ORCID,Chaturvedi Nidhi²,Akbar SA¹²

Affiliation:

1. CSIR‐CEERI Academy of Scientific and Innovative Research Ghaziabad Uttar Pradesh India

2. CSIR‐Central Electronics Engineering Research Institute Pilani Rajasthan India

Funder

Council for Scientific and Industrial Research, South Africa

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.2932

Reference21 articles.

1. Electrical detection of deoxyribonucleic acid hybridization with AlGaN∕GaN high electron mobility transistors

2. Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

3. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

4. Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure

5. Chemically gated AlGaN∕GaN heterostructure field effect transistors for polar liquid sensing

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