Lead‐free perovskite MASnBr 3 ‐based memristor for quaternary information storage-Reference-Cited by-同舟云学术

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Lead‐free perovskite MASnBr 3 ‐based memristor for quaternary information storage

Published:2019-11-25 Issue:4 Volume:2 Page:743-751
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Qian Wen‐Hu¹²,Cheng Xue‐Feng¹,Zhou Jin¹,He Jing‐Hui¹,Li Hua¹,Xu Qing‐Feng¹,Li Na‐Jun¹,Chen Dong‐Yun¹,Yao Zhi‐Gang²,Lu Jian‐Mei¹^ORCID

Affiliation:

1. National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou China

2. Testing and Analysis CenterSoochow University Suzhou China

Funder

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12066

Reference46 articles.

1. Memristor‐missing circuit element;Chua LO;IEEE Trans Circuit Syst,1971

2. The missing memristor found

3. Memristor-based multilevel memory

4. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

5. Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

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