Optical emission characterization of an atmospheric pressure dielectric barrier discharge in nitrogen: Evolution of CN emissions during PTFE etching

Author:

Destrieux Alex123ORCID,Caceres Ferreira Williams M.123ORCID,Costantino Zachary4,Profili Jacopo123ORCID,Laroche Gaetan123ORCID

Affiliation:

1. Département de Génie des Mines, de la Métallurgie et des Matériaux, Faculté des Sciences et de Génie Université Laval Québec Québec Canada

2. Laboratoire d'Ingénierie de Surface, Département de Génie des Mines, Centre de Recherche sur les Matériaux Avancés, de la Métallurgie et des Matériaux Université Laval Québec Québec Canada

3. Centre de Recherche du CHU de Québec‐Université Laval, Hôpital St François d'Assise Québec Québec Canada

4. Division Performance Plastics Saint‐Gobain Research North America Northborough Massachusetts USA

Abstract

AbstractThe present work investigates the etching of coated polytetrafluoroethylene (PTFE) films using an atmospheric pressure dielectric barrier discharge operating in nitrogen in a filamentary regime. For different treatment durations, the optical emission spectra were recorded over time. Most of the emissions are attributed to the N2 second positive system. The presence of CN is also observed, and its emissions rise with the exposure time of PTFE. This rise is attributed to the density of CN produced. The X‐ray photoelectron spectroscopy surface characterization suggests two etching regimes. This is linked with a change in slope in the intensity evolution of the optical emissions of the CN. At longer times, a fluorinated deposit on the electrode is observed, confirming a different nature of the etched material.

Funder

Saint-Gobain Northboro Research and Development Center

Natural Sciences and Engineering Research Council of Canada

Publisher

Wiley

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