Cyclic etching of silicon oxide using NF 3 /H 2 remote plasma and NH 3 gas flow
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon Republic of Korea
2. SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Suwon Republic of Korea
Publisher
Wiley
Subject
Polymers and Plastics,Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.202100063
Reference20 articles.
1. Highly selective etch process for silicon-on-insulator nano-devices
2. Observation of surface reaction layers formed in highly selective SiO2 etching
3. Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
4. Highly selective dry etching of III nitrides using an inductively coupled Cl[sub 2]/Ar/O[sub 2] plasma
5. Dry Etching of Electronic Oxides, Polymers, and Semiconductors
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3. Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment;Japanese Journal of Applied Physics;2023-12-01
4. Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor;Scientific Reports;2023-07-18
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