Nitrogen‐doping graphene at ambient conditions with N2‐DBD‐plasma and the role of neutral species

Abstract

AbstractWe doped nitrogen into monolayer graphene using reactive nitrogen species from a dielectric barrier discharge (DBD). After 30 s of treatment, the graphene monolayer had a moderate degree of damage (ID/IG = 1.2) and an increase in the N‐atom (pyrrolic) and O‐atom (mixed) content. During long treatment times (20 min), the treated area increased radially and the graphene was destroyed. Overall, the N‐atom content increased with increasing operating voltage of the DBD source. When the graphene was treated with only neutral reactive nitrogen species, the N‐atom content and type remained unchanged. Therefore, we hypothesize that the primary reactive species resulting in pyrrolic N‐doping from the DBD are neutrals such as N(4S) and possibly N(2P).