The impact of plasma enhancement on the deposition of carbon‐containing zirconia films by metalorganic chemical vapor deposition

Abstract

AbstractZirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation ‐ plasma‐enhanced chemical vapor deposition (PECVD]) ‐ of the gas phase and/or the growth surface to lower the growth temperature and to allow for a flexible coating design. PECVD causes the precursor to be transformed into a chemically active species, yielding thin films with a five times higher sticking coefficient compared to MOCVD. This leads to the onset of crystallization at lower surface temperatures. Carbon is incorporated at oxygen sites, so that the crystalline structure of zirconia is preserved, but the electrical conductivity is affected. The thermal conductivity is like that of pure zirconia.