Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium-Reference-Cited by-同舟云学术

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Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium

Published:2002-08-27 Issue:5 Volume:12 Page:439-447
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Schreurs D.,van Niekerk C.,Vandersmissen R.,Borghs G.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference13 articles.

1. and Silicon MCM-D technology for RF integration, International Conf and Exhibition on Multichip Module, 1997, pp. 340-344.

2. and Germanium devices: Hybrid integration and substrate removal, International Conf on Gallium-Arsenide Manufacturing Technology, 2001, pp. 85-88.

3. Metamorphic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on germanium substrates

4. Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

5. Consistent small-signal and large-signal extraction techniques for heterojunction FET's

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new hybrid multibias analytical/decomposition-based FET parameter extraction algorithm with intelligent bias point selection;IEEE Transactions on Microwave Theory and Techniques;2003-03

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