Low‐Energy Spin Manipulation Using Ferromagnetism

Author:

Desbuis Valentin1,Lacour Daniel1,Tiusan Coriolan2,Weber Wolfgang3,Hehn Michel1

Affiliation:

1. Institut Jean Lamour CNRS – Université de Lorraine Nancy 54011 France

2. Center of Superconductivity, Spintronics and Surface Science (C4S) Technical University of Cluj‐Napoca Cluj Napoca 400114 Romania

3. Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS Université de Strasbourg 23 Rue du Loess, BP 43 Strasbourg Cedex 2 67034 France

Abstract

AbstractThe manipulation of the electron spin direction at very low electron energies is demonstrated by exploiting the exchange field present within a magnetic thin film. The design of the lab‐on‐chip integrated magnetic tunnel transistor allows  to test different magnetic materials. The variation of film thickness, exchange field strength or electron energy are shown to have an impact on the resulting spin direction of electrons crossing a ferromagnetic material. A controlled engineering of the exchange field in thin magnetic films can therefore serve as a basis of future devices enabling controlled spin manipulation.

Publisher

Wiley

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