A high-efficiency gan power amplifier with harmonic control based on Si-IPDS-Reference-Cited by-同舟云学术

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A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Published:2016-06-27 Issue:9 Volume:58 Page:2178-2182
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Jin An Sung¹²,Min Yook Jong¹,Woong Yoon Tae¹²,Kim Hyeok¹³,Chul Kim Jun¹,Yook Jong-Gwan²,Park Youngcheol³,Kim Dongsu¹

Affiliation:

1. ICT Device Packaging Research Center, Korea Electronics Technology Institute (KETI); Seongnam-Si Gyeonggi-do, 463-816, Korea;

2. School of Electrical and Electronics Engineering; Yonsei University; Seoul Korea

3. Department of Electronics Engineering; Hankuk University of Foreign Studies; Yongin-Si Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. A 2.4 GHz-band 100 W GaN-HEMT high-efficiency power amplifier for microwave heating;Nakatani;J Electromagn Eng Sci,2015

2. Ramadan A. Martin T. Reveyrand J.-M. Nebus P. Bouysse L. Lapierre J.F. Villemazet S. Forestier th 2009

3. A miniaturized WiMAX band 4-W class-F GaN HEMT power amplifier module;Jeong;IEEE Trans Microwave Theory Tech,2011

4. M. Camiade D. Bouw G. Mouginot F. Auvray P.F. Alleaume D. Floriot L. Favede J. Thorpe H. Stieglauer nd 2012 1023 1026

5. C. Berrached D. Bouw M. Camiade D. Barataud 2013 424 427

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