Asymmetric Phase Transitions Observed at the Interface of a Field‐Effect Transistor Based on an Organic Mott Insulator-Reference-Cited by-同舟云学术

Asymmetric Phase Transitions Observed at the Interface of a Field‐Effect Transistor Based on an Organic Mott Insulator

Published:2014-05-06 Issue:24 Volume:2014 Page:3841-3844
ISSN:1434-1948
Container-title:European Journal of Inorganic Chemistry
language:en
Short-container-title:Eur. J. Inorg. Chem.

Author:

Yamamoto Hiroshi M.¹²,Kawasugi Yoshitaka²,Cui Hengbo²,Nakano Masaki³,Iwasa Yoshihiro⁴⁵,Kato Reizo²

Affiliation:

1. Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, Okazaki, Aichi 444‐8585, Japan, http://yamamoto‐tokyo.jp/ims

2. RIKEN, Wako, Saitama 351‐0198 Japan

3. Institute for Materials Research, Tohoku University, Aoba‐ku, Sendai 980‐8577, Japan

4. RIKEN Center for Emergent Matter Science, Wako, Saitama 351‐0198 Japan

5. Quantum Phase Electronics Center and Department of Applied Physics, School of Engineering, The University of Tokyo, Bunkyo‐ku, Tokyo 113‐8656, Japan

Publisher

Wiley

Subject

Inorganic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ejic.201402025

Reference18 articles.

2. Electrostatic Modulation of Superconductivity in Ultrathin GdBa 2 Cu 3 O 7-x Films

3. Electric field control of the LaAlO3/SrTiO3 interface ground state

4. Electric-field-induced superconductivity in an insulator

5. Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance

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