Enahnced Al0.11 Ga0.89 N/Cu2 O Solar Cells by a Semi Transparent Electrode-Reference-Cited by-同舟云学术

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Enahnced Al0.11 Ga0.89 N/Cu2 O Solar Cells by a Semi Transparent Electrode

Published:2017-11-20 Issue:1 Volume:215 Page:1700545
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hering Karl Philipp¹^ORCID,Bergert Roman¹,Mitic Slobodan¹

Affiliation:

1. I. Physikalisches Institut Justus-Liebig-Universität; 35392 Giessen Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Material considerations for terawatt level deployment of photovoltaics

2. Sustainability and renewable energies - a critical look at photovoltaics

3. Materials Availability Expands the Opportunity for Large-Scale Photovoltaics Deployment

4. Heterojunction solar cell with 6% efficiency based on an n-type aluminum–gallium–oxide thin film and p-type sodium-doped Cu2O sheet

5. High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer

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