XPS analysis and valence band structure of a low-dimensional SiO2 /Si system after Si+ ion implantation-Reference-Cited by-同舟云学术

XPS analysis and valence band structure of a low-dimensional SiO2 /Si system after Si+ ion implantation

Published:2011-04-13 Issue:7 Volume:208 Page:1658-1661
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zatsepin D. A.,Mack P.,Wright A. E.,Schmidt B.,Fitting H.-J.

Funder

RFBR

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201026713/fullpdf

Reference11 articles.

1. Nucleation and growth of Si nanocrystals in an amorphousSiO2matrix

2. Direct ion beam synthesis of II–VI nanocrystals

3. Soft X-ray emission spectroscopy of low-dimensional SiO2 /Si interfaces after Si+ ion implantation and ion beam mixing

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