Improved Electron Transport Properties of Ga 1– x In x Sb Quantum Well Channel Using Strained‐Al 0.40 In 0.60 Sb/Al 1– y In y Sb Stepped Buffer-Reference-Cited by-同舟云学术

Improved Electron Transport Properties of Ga 1– x In x Sb Quantum Well Channel Using Strained‐Al 0.40 In 0.60 Sb/Al 1– y In y Sb Stepped Buffer

Published:2019-11-12 Issue:3 Volume:217 Page:1900516
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hiraoka Mizuho¹^ORCID,Endoh Yuki¹,Osawa Koki¹,Kishimoto Naoyuki¹,Hayashi Takuya¹,Machida Ryuto¹,Watanabe Issei²,Yamashita Yoshimi²,Hara Shinsuke²,Gotow Takahiro²,Kasamatsu Akifumi²,Endoh Akira¹,Fujishiro Hiroki I.¹

Affiliation:

1. Department of Applied ElectronicsTokyo University of Science 6-3-1, Niijuku, Katsushika-ku Tokyo 125-8585 Japan

2. National Institute of Info. & Com. Tech. (NICT) 4-2-1, Nukui-Kitamachi, Koganei-shi Tokyo 184-8795 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900516

Reference14 articles.

1. X. B.Mei R.Lai J.Lee W.Yoshida P. O.Liu Z.Zhou M.Lange I.Smorchkova K.Leong W.Deal inProc. Compound Semiconductor Week 2015 Santa Barbara CA USA June2015 Mo3E1.1.

2. Anisotropic structural and electronic properties of InSb/AlxIn1−xSb quantum wells grown on GaAs (001) substrates

3. S.Datta T.Ashley J.Brask L.Buckle M.Doczy M.Emeny D.Hayes K.Hilton R.Jefferies T.Martin T. J.Phillips D.Wallis P.Wilding R.Chau Tech. Dig. International Electron Devices Meeting 2005 Washington DC USA December 2005 p.763

4. Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 −xSb heterostructures

5. N.Oka K.Isono Y.Harada J.Takeuchi T.Iwaki Y.Endoh I.Watanabe Y.Yamashita A.Endoh S.Hara R.Machida A.Kasamatsu H. I.Fujishiro Proc. Topical Workshop on Heterostructure Microelectronics Kirishima Japan August2017 WeD9-6.

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1. Effect of Strain in Channel on Electron Transport Properties of Ga _{1−
x} In _x Sb High Electron Mobility Transistor Structures with Strained‐Al _0.40 In _0.60 Sb/Al _0.25 In _0.75 Sb Stepped Buffer;physica status solidi (a);2023-01-06