A DC Model of the Planar Dual-Gated FD-SOI MOSFET that Captures the Effects of High Biases and HALO-Reference-Cited by-同舟云学术

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A DC Model of the Planar Dual-Gated FD-SOI MOSFET that Captures the Effects of High Biases and HALO

Published:2018-01-11 Issue:5 Volume:215 Page:1700419
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tarakji Ahmad Houssam¹

Affiliation:

1. Solidi Technologies; 4851 Kokomo Dr. Sacramento CA 95835 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. A. Joshi T. Y. Lee Y. Y. Chen D. Whitefield 2014 SOI-3D-Subthreshold Microelectronics Tech. Unified Conf. (S3S) 2014 ieeexplore.ieee.org

2. A. S. Cardoso P. Saha P. S. Chakraborty D. M. Fleischhauer J. D. Cressler Radio and Wireless Symposium 2014 1999 ieeexplore.ieee.org

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films;Semiconductors;2020-02

2. Potential of a novel double-sided fully-depleted silicon-on-insulator CMOS architecture for the next-generation monolithic 3D CPUs and SOCs;2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S);2019-10-14

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