Effect of thickness of bilayer dielectric on 1,7-dibromo-N,N′-dioctadecyl -3,4,9,10-perylenetetracarboxylic diimide based organic field-effect transistors-Reference-Cited by-同舟云学术

Effect of thickness of bilayer dielectric on 1,7-dibromo-N,N′-dioctadecyl -3,4,9,10-perylenetetracarboxylic diimide based organic field-effect transistors

Published:2014-06-06 Issue:10 Volume:211 Page:2403-2411
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Subbarao Nimmakayala V. V.¹,Gedda Murali²,Vasimalla Suresh³,Iyer Parameswar K.¹³,Goswami Dipak K.¹²⁴

Affiliation:

1. Center for Nanotechnology; Indian Institute of Technology Guwahati; Guwahati 781039 India

2. Department of Physics; Indian Institute of Technology Guwahati; Guwahati 781039 India

3. Department of Chemistry; Indian Institute of Technology Guwahati; Guwahati 781039 India

4. Department of Physics; Indian Institute of Technology; Kharagpur 721302 India

Funder

Department of Science and Technology

Government of India under the projects

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431304/fullpdf

Reference46 articles.

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5. High-Mobility Field-Effect Transistors from Large-Area Solution-Grown Aligned C60 Single Crystals

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