Limiting Defects in n‐Type Multicrystalline Silicon Solar Cells-Reference-Cited by-同舟云学术

Limiting Defects in n‐Type Multicrystalline Silicon Solar Cells

Published:2019-08-12 Issue:17 Volume:216 Page:1900331
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Schubert Martin C.¹^ORCID,Schindler Florian¹,Schön Jonas¹²,Kwapil Wolfram¹²,Benick Jan¹,Müller Ralph¹,Heinz Friedemann D.¹²,Fell Andreas¹,Riepe Stephan¹,Morishige Ashley³

Affiliation:

1. Fraunhofer Institute of Solar Energy SystemsISE Division Photovoltaics Heidenhofstr. 2 79110 Freiburg Germany

2. Laboratory for Photovoltaic Energy ConversionUniversity Freiburg Emmy-Noether-Str. 2 79110 Freiburg Germany

3. MIT Photovoltaic Research LaboratoryMassachusetts Institute of Technology Cambridge MA 02139 USA

Funder

Bundesministerium für Wirtschaft und Energie

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900331

Reference62 articles.

1. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

2. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

3. J.Schmidt B.Lim D.Walter K.Bothe S.Gatz T.Dullweber P. P.Altermatt in2012 IEEE 38th Photovoltaic Specialists Conf. (PVSC) PART 22012 pp.1–5 IEEE.

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