Polarization-controlled dressed-photon-phonon etching of patterned diamond structures-Reference-Cited by-同舟云学术

Polarization-controlled dressed-photon-phonon etching of patterned diamond structures

Published:2014-07-15 Issue:10 Volume:211 Page:2339-2342
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yatsui Takashi¹²,Takeuchi Daisuke²³⁴,Koizumi Satoshi²⁴⁵,Sato Kazuki⁴⁶,Tsuzuki Kohei⁴⁶,Iwasaki Takayuki⁴⁶,Hatano Mutsuko²⁴⁶,Makino Toshiharu²³⁴,Ogura Masahiko²³⁴,Kato Hiromitsu²³⁴,Okushi Hideyo²³⁴,Yamasaki Satoshi²³⁴⁷

Affiliation:

1. School of Engineering; The University of Tokyo; 113-8656 Tokyo Japan

2. Advanced Low Carbon Technology Research and Development Program (ALCA); Japan Science and Technology Agency (JST); 332-0012 Saitama Japan

3. Energy Technology Research Institute; National Institute of Advanced Industrial Science and Technology (AIST); 305-8568 Ibaraki Japan

4. Core Research for Evolutional Science and Technology (CREST); Japan Science and Technology Agency (JST); 332-0012 Saitama Japan

5. Wide Bandgap Materials Group; National Institute of Materials Science (NIMS); 305-0044 Ibaraki Japan

6. Department of Physical Electronics; Tokyo Institute of Technology; 152-8550 Tokyo Japan

7. Pure and Applied Sciences; University of Tsukuba; 305-0006 Ibaraki Japan

Funder

Scientific Research

Exploratory Research Program

The Asahi Glass Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431161/fullpdf

Reference17 articles.

1. Diamond power devices. Concepts and limits

2. Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces

3. Negative electron affinity of diamond and its application to high voltage vacuum power switches

4. Selective Growth of Buried n+Diamond on (001) Phosphorus-Doped n-Type Diamond Film

5. Realization of an ultra-flat silica surface with angstrom-scale average roughness using nonadiabatic optical near-field etching

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