Current density impact on the emission behavior of GaN-based blue emitting LEDs in the temperature range of 4.2-400 K-Reference-Cited by-同舟云学术

Current density impact on the emission behavior of GaN-based blue emitting LEDs in the temperature range of 4.2-400 K

Published:2014-05-02 Issue:7 Volume:211 Page:1660-1667
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hetzel Reinhold¹²,Leising Günther¹

Affiliation:

1. Institute of Solid State Physics; Graz University of Technology; Petersgasse 16 8010 Graz Austria

2. LUMITECH Produktion und Entwicklung GmbH; Technologiepark 10; 8380 Jennersdorf Austria

Funder

Harald Plank and Sebastian Rauch for FIB and EDX measurements (Institute for Electron Microscopy and Nanoanalysis (FELMI) of Graz University of Technology).

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431046/fullpdf

Reference49 articles.

1. Determination of junction temperature and thermal resistance in the GaN‐based LEDs using direct temperature measurement

2. Optical properties of GaN epilayers on sapphire

3. The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

4. Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

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2. Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K;Applied Sciences;2020-01-08