Raman study of insulating and conductive ZnO:(Al, Mn) thin films-Reference-Cited by-同舟云学术

Raman study of insulating and conductive ZnO:(Al, Mn) thin films

Published:2015-07-30 Issue:10 Volume:212 Page:2345-2354
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Cerqueira M. F.¹,Viseu T.¹,Ayres de Campos J.¹,Rolo A. G.¹,de Lacerda-Aroso T.¹,Oliveira F.¹,Bogdanovic-Radovic I.²,Alves E.³,Vasilevskiy M. I.¹

Affiliation:

1. Centro de Física e Departamento de Física; Universidade do Minho; Campus de Gualtar 4710-057 Braga Portugal

2. Rudjer Boskovic Institute; Bijenicka cesta 54 10000 Zagreb Croatia

3. Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico; Universidade Técnica de Lisboa; EN10 2696-953 Sacavém Portugal

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

2. Annealing study of Sb+ and Al+ ion-implanted ZnO

3. Thermal stability of ion-implanted ZnO

4. Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions

5. Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method

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