Homoepitaxial growth of CVD diamond after ICP pretreatment-Reference-Cited by-同舟云学术

Homoepitaxial growth of CVD diamond after ICP pretreatment

Published:2015-08-24 Issue:11 Volume:212 Page:2572-2577
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Muchnikov A. B.¹,Vikharev A. L.¹,Butler J. E.¹,Chernov V. V.¹,Isaev V. A.¹,Bogdanov S. A.¹,Okhapkin A. I.²³,Yunin P. A.²,Drozdov Y. N.²

Affiliation:

1. Institute of Applied Physics of the Russian Academy of Sciences; 46 Ulyanov st. 603950 Nizhny Novgorod Russia

2. Institute for Physics of Microstructures of the Russian Academy of Sciences; GSP-105 603950 Nizhny Novgorod Russia

3. N.I. Lobachevsky State University of Nizhny Novgorod; 23 Gagarina Avenue 603950 Nizhny Novgorod Russia

Funder

Russian Government

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532171/fullpdf

Reference14 articles.

1. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition

2. Stepped growth and etching of (001) diamond

3. Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition

4. Hydrogen plasma etching mechanism on (001) diamond

5. Identification of etch-pit crystallographic faces induced on diamond surface by H2 /O2 etching plasma treatment

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