Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Published:2019-10-21 Issue:7 Volume:217 Page:1900729
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wu Yaozheng¹,Liu Bin¹^ORCID,Li Zhenhua¹,Tao Tao¹,Xie Zili¹,Wang Ke¹,Xiu Xiangqian¹,Chen Dunjun¹,Lu Hai¹,Zhang Rong¹,Zheng Youdou¹

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsSchool of Electronic Science and EngineeringNanjing University Nanjing 210093 China

Funder

Six Talent Peaks Project in Jiangsu Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900729

Reference31 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

3. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

4. Shortest wavelength semiconductor laser diode

5. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

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