Performance Enhancement of Solution-Derived Zinc-Tin-Oxide Thin Film Transistors by Low-Temperature Microwave Irradiation-Reference-Cited by-同舟云学术

Performance Enhancement of Solution-Derived Zinc-Tin-Oxide Thin Film Transistors by Low-Temperature Microwave Irradiation

Published:2017-10-10 Issue:12 Volume:214 Page:1700350
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Cho Won-Ju¹,Ahn Min-Ju¹^ORCID,Jo Kwang-Won¹^ORCID

Affiliation:

1. Prof. ; W.-J. Cho, M.-J. Ahn, K.-W. Jo; Department of Electronic Materials Engineering, Kwangwoon University; 447-1, Wolgye-dong, Nowon-gu Seoul 139-701 Korea

Funder

Ministry of Education, Science, and Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

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3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. ZnO-based transparent thin-film transistors

5. Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

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